SEMI grade mono silicon ingot 1.Type:P-type and N-type 2.Size:3''-8'' 3.Purity :11N 4.Resistivity:>0.001ohm

Specifications:

Semi Grade Mono Silicon Ingot
Size	3"/4"/5"/6"/8''
Growth method	CZ
Diameter	76.2±0.3mm /100±0.4mm / 125±0.5mm / 150±0.5mm / 200±0.5mm
Orientation	<111>/<100>
Type	N-type/P-type
Dopant	P-type:Boron
	N-type:Phos./As./Sb.
Purity	11N(99.999999999%)
Oxygen Content	≤18 New PPMA
Carborn Content	≤1New PPMA
Resistivity	≥0.001Ω·cm
Others	No Lineage,Slip,Twinning,Cracks,or Dislocations.
Length limits	Accoriding to your requirement.
MOQ	10kgs
Package	Packed in wooden crate,inside with Polyethylene foam.
Price	According to your specification,especially resistivity.

SEMI grade mono silicon ingot