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| IC Grade Mono Silicon Ingot | ||
| Size | 3"/4"/5"/6"/8'' | |
| Growth method | CZ | |
| Diameter | 76.2±0.3mm /100±0.4mm / 125±0.5mm / 150±0.5mm / 200±0.5mm | |
| Orientation | <111>/<100> | |
| Type | N-type/P-type | |
| Dopant | P-type:Boron | |
| N-type:Phos./As./Sb. | ||
| Purity | 11N(99.999999999%) | |
| Oxygen Content | ≤18 New PPMA | |
| Carborn Content | ≤1New PPMA | |
| Resistivity | ≥0.001Ω·cm | |
| Others | No Lineage,Slip,Twinning,Cracks,or Dislocations. | |
| Length limits | Accoriding to your requirement. | |
| MOQ | 10kgs | |
| Package | Packed in wooden crate,inside with Polyethylene foam. | |
| Price | According to your specification,especially resistivity. | |
IC grade mono silicon ingots