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1 The product structure: silicon NPN extension flat type, metal hermetic sealing
2 Characteristics:
19.5 gram per piece Short opened or cut-off time high breakdown voltage& power3 standard: national standard of ΙΙ GB4589.1-89 GB12560-90 Q/FR118-93
4 application: widely used in power switch circuit, high voltage amplifier circuit, etc.
Para name | symbols | 3DK020E | 3DK020F | 3DK020G | 3DK020H | unit | |
collector-base voltage (IE=0) | VCBO | 300 | 350 | 400 | 450 | V | |
collector-emitter voltage (IB=0) | VCEO | 300 | 3500 | 400 | 450 | V | |
Emitter-base voltage (IC=0) | VEBO | 5 | V | ||||
collector DC current | IC | 12 | A | ||||
Base DC current | IB | 3 | A | ||||
Total dissipation power TC≤25°C TC=75°C TC>25°C Lower voltage |
Ptot | 350 233 2.33 |
W
W/°C | ||||
Working temperature | Tj | 175 | °C | ||||
Store temperature | Tstg | -55~175 | °C |
outline dimension