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| IC Grade Mono Silicon Wafer (single side polished ) | ||
| Size | 3”/4"/5"/6" | |
| Growth method | CZ | |
| Grade | Prime grade | |
| Diameter | 100±0.4mm / 125±0.5mm / 150±0.5mm | |
| Orientation | <111>/<100> | |
| Type | N-type/P-type | |
| Dopant | P-type:Boron | |
| N-type:Phos./As./Sb. | ||
| Purity | 11N(99.999999999%) | |
| Oxygen Content | ≤18 New PPMA | |
| Carborn Content | ≤1 New PPMA | |
| Resistivity | ≥0.001Ω·cm | |
| Thickness | ≥200um, or according to your requirement | |
| Others | TTV≤10um, Bow≤35um,Warp≤35um | |
| Particles | ≥0.3um@≤10PPW | |
| Surface | Frond side polished,back side etched. | |
| MOQ | 100pcs | |
| Package | Packed in cassette,and sealed in vacuum bag,25pcs/cassette. | |
| Price | According to your specification,especially resistivity and thickness | |
5" IC grade prime silicon wafers