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GDU type SiC rods
Silicon Carbide (SiC) heating elements is a non-metal electric heating element made from SiC as its main raw materials. It has some specific properties, such as low expansion coefficient, little deformation, stable chemical property, long service life, easy installation and maintenance, etc.
Silicon Carbide (SiC) heating elements can be directly used in an air atmosphere without any protection atmosphere. It is extensively used in the fields of metallurgy, ceramics, glass, machinery, analysis test, semiconductor, science & research and so on.
| Diameter | Length of hot zone (I) | Length of cold zone | Overall Length | Range of Resistance | Diameter | Length of hot zone (I) | Length of cold zone | Overall Length | Range of Resistance |
| (d) | (L) | (d) | (L) | ||||||
| 8 | 100-300 | 60-200 | 240-700 | 2.1-7.2 | 30 | 300-2000 | 250-800 | 800-3600 | 0.4-4.0 |
| 12 | 100-400 | 100-350 | 300-1100 | 0.8-6.0 | 35 | 400-2000 | 250-800 | 900-3600 | 0.5-3.4 |
| 14 | 100-500 | 150-350 | 400-1200 | 0.8-5.6 | 40 | 500-2700 | 250-800 | 1000-4300 | 0.5-3.0 |
| 16 | 200-600 | 200-350 | 600-1300 | 0.8-4.4 | 45 | 500-3000 | 250-750 | 1000-4500 | 0.3-2.5 |
| 18 | 200-800 | 200-400 | 600-1600 | 0.7-5.8 | 50 | 600-2500 | 300-750 | 1200-4000 | 0.3-2.5 |
| 20 | 200-800 | 250-600 | 700-2000 | 0.6-5.0 | 54 | 600-2500 | 300-750 | 1200-4000 | 0.3-2.5 |
| 25 | 200-1200 | 250-700 | 700-2600 | 0.6-4.5 |
| The influence of operating temperature and surface load on the rod surface in a different atmosphere | |||
| Atmosphere | Furnace temperature(°C) | Surface load(W/cm²) | The influence on the rod |
| Aammonia | 1290 | 3.8 | The action on SiC produces mathene and destorys the protection film of SiO2 |
| Carbondioxide | 1450 | 3.1 | Corrode SiC |
| Carbo monoxide | 1370 | 3.8 | Aabsorb carbon power and influence the protection film of SiO2 |
| Halogen | 704 | 3.8 | Corrode SiC and destory the protection film of SiO2 |
| Hydrogen | 1290 | 3.1 | The action on SiC produces mathene and destorys the protection film of SiO2 |
| Nitrogen | 1370 | 3.1 | The action on SiC produces insulating layer of silicon nitride |
| Sodium | 1310 | 3.8 | Corrode SiC |
| Sulphur dioxide | 1310 | 3.8 | Corrode SiC |
| Oxygen | 1310 | 3.8 | SiC Oxidized |
| Water-vapour | 1090-1370 | 3.1-3.6 | The action on SiC produces hydrate of silicon |
| Hydrocardon | 1370 | 3.1 | Aabsorb carbon power resulted in Hot pollution |