156 Multi crystalline Wafer Specification

Growth Method

DSS

Conductive Type

P

Dopant

B

Resistivity(ρ)

0.5 -3.0Ω·cm or 3.0-6.0Ω·cm

Minority Carrier Lifetime

≥2μs measured in wafer

Oxygen Content (Oi)

≤1.0*1018 /cm3

Carbon Content(C)

≤8.0*1017/cm3

Dimension

156*156±0.5mm

Square Sides Angle

45° ± 10°

Streight Sections Length Deviation

0.5-1 mm

Thickness

200±20 μm

TTV

≤30μm

Saw Mark

≤20μm

Chips

Depth<0.3mm;Length<0.5mm

Micro Cracks

Not Allowed

Appearance

No Stain, No Edge Breakage, No Chips