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China 808nm infrared laser diode module
Specification:
Peak wavelength | 808nm |
Operating voltage | 3-5V |
Operating current | 10-30mA |
Optical power | 1-5mW |
Spot diameter at 10metre | 5mm |
Operating temperature | -10°C~40°C |
Storage temperature | -40°C~85°C |
Outside | φ12*35mm |
PCB: | built-in |
Feature:
material:brass
lift time:5000Hs
lighting color:red
appearance:silver
Certification:
TUV/FDA/ROHS/CE
Advantage :
1)built at Shenzhen near the port and convenient traffic.
2)manufacture laser diode module ,reasonable price .
3)more than 100 workers , short delivery time supplier.
China 808nm infrared laser diode module