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1 The product structure: Silicon bipolar NPN power switching transistor,silicon NPN extension flat type, metal hermetic sealing
2 Characteristics:
2 gram per piece Short opened or cut-off time High breakdown voltage great dissipation power light weight, small volumn3 standard: national standard of ΙΙ GB4589.1-89 GB12560-90 Q/FR115-93
4 application: widely used in switch circuit, amplifier circuit, etc.
Para name | symbols | DK150A | DK150B | DK150C | DK150D | DK150E | DK150F | DK150J | DK150H | unit |
collector-base voltage (IE=0) | VCBO | 300 | 350 | 400 | 450 | 500 | 550 | 600 | 700 | V |
collector-emitter voltage (IB=0) | VCEO | 300 | 350 | 400 | 450 | 500 | 550 | 600 | 700 | V |
Emitter-base voltage (IC=0) | VEBO | 5 | V | |||||||
collector DC current | IC | 10 | A | |||||||
Base DC current | IB | 1 | A | |||||||
Total dissipation power TC≤25°C TC=75°C TC>25°C Lower voltage |
Ptot |
250 150 2 |
W
W/°C | |||||||
Working temperature | Tj | 150 | °C | |||||||
Store temperature | Tstg | -55~175 | °C |