DFF10N65,MOSFET: 1,VDSS:650V; 2,RDS(ON) ):0.8 ohm; 3,Id:9.7 A; Package:TO-220F; 4,Certification:RoHS etc..

10N65,MOSFET Transistor:

1,Part Number:DFF10N65;2,Drain to Source Voltage(VDSS):650V;3,Static Drain-Source On-state Resistance(RDS(ON) ):0.8 ohm;4,Continuous Drain Current(@TC = 25'C)(Id):9.7 A;5,Package:TO-220F;Axial lead;N-Channel MOSFET;6,Certification:RoHS Conformance etc..

7,Features RDS(on) (Max 0.8Ω) Gate Charge (Typical 47nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested Rohs Compliable Halogen Free available 

8,General DescriptionThis N-channel enhancement mode field-effect power transistorusing DI semiconductor’s advanced planar stripe, DMOStechnology intended for off-line switch mode power supply.Also, especially designed to minimize rds(on) and high ruggedavalanche characteristics.The TO-220 & TO220 full packages are well suited for chargerSMPS and small power inverter application. 

10N65 MOSFET Transistor