1. high purity:12N 2. float zone technology 3. conductivity type:N or P 4. size:2"- 4" N<111> 5:resistance:1000-3000ohm

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Application

Power rectifiers, power transistors, diodes, switching devices  

the FZ growers principles:

The growth proess starts by inserting a polycrystalline ingot into the upper chamber/pulling arrangment.Thereafter the ingot is pri-heated by means of a graphite heater.After pre-heating,the graphite heater is swung away and the cone_shaped ingot is lowered into the active zone of the high frequency coil.which is now able to melt the silicon ingot to the seed crystal.The one-pass monocrystalline growth process can now begin.

12N high purity monocrystalline fz silicon ingots