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U Type SiC heating elements
U Type Sic heating elements to be made up of two RR Sic heating elements. Each one has two parts of the non-connective hot zone and cold end. Also it has the same resistance to ensure unify working. Our Silicon Carbide (SiC) heating element is a type of non-metal high temperature heating device. These SiC products are made from fine quality green silicon carbide as its main raw material. The raw material is made first in to a blank, followed by high temperature silication and recrystallization, and becomes high quality stick shaped SiC electric heating devices. Compared with metal electric heating material, this type of non-metal elements is featured of high operation temperature, anti-oxidization, long service life, little deformation, easy installation and maintenance. Because of these advantages, SiC heating elements are widely used in various industries that require high temperature electric furnaces and heating devices. These typical applications include electronics, magnetic materials, powder metallurgy, ceramics, glass, metallurgy and machinery. Products specification: Rod type, U type, W type (Three Phase type), Solid Rod type, Spiral type, 5 piece type (dual hot zone), special type, etc.
Please see below table:
| Sic rod specifications and resistance range | |||||||||
| Diameter | Length of hot zone (I) | Length of cold zone | Overall Length | Range of Resistance | Diameter | Length of hot zone (I) | Length of cold zone | Overall Length | Range of Resistance |
| (d) | (L) | (d) | (L) | ||||||
| 8 | 100-300 | 60-200 | 240-700 | 2.1-7.2 | 30 | 300-2000 | 250-800 | 800-3600 | 0.4-4.0 |
| 12 | 100-400 | 100-350 | 300-1100 | 0.8-6.0 | 35 | 400-2000 | 250-800 | 900-3600 | 0.5-3.4 |
| 14 | 100-500 | 150-350 | 400-1200 | 0.8-5.6 | 40 | 500-2700 | 250-800 | 1000-4300 | 0.5-3.0 |
| 16 | 200-600 | 200-350 | 600-1300 | 0.8-4.4 | 45 | 500-3000 | 250-750 | 1000-4500 | 0.3-2.5 |
| 18 | 200-800 | 200-400 | 600-1600 | 0.7-5.8 | 50 | 600-2500 | 300-750 | 1200-4000 | 0.3-2.5 |
| 20 | 200-800 | 250-600 | 700-2000 | 0.6-5.0 | 54 | 600-2500 | 300-750 | 1200-4000 | 0.3-2.5 |
| 25 | 200-1200 | 250-700 | 700-2600 | 0.6-4.5 | |||||
| Relations between rod operating temperature and norminal surface load | |||||||
| Surface load element hot zone | Furnace temperature(C) | 1100 | 1200 | 1300 | 1350 | 1400 | 1450 |
| SWD type | 20 | 17 | 12 | 8 | 5 | 4 | |
| W/cm² | SW type | 17 | 13 | 9 | 7 | 5 | 4 |
| The influence of operating temperature and surface load on the rod surface in a different atmosphere | |||
| Atmosphere | Furnace temperature(°C) | Surface load(W/cm²) | The influence on the rod |
| Aammonia | 1290 | 3.8 | The action on SiC produces mathene and destorys the protection film of SiO2 |
| Carbondioxide | 1450 | 3.1 | Corrode SiC |
| Carbo monoxide | 1370 | 3.8 | Aabsorb carbon power and influence the protection film of SiO2 |
| Halogen | 704 | 3.8 | Corrode SiC and destory the protection film of SiO2 |
| Hydrogen | 1290 | 3.1 | The action on SiC produces mathene and destorys the protection film of SiO2 |
| Nitrogen | 1370 | 3.1 | The action on SiC produces insulating layer of silicon nitride |
| Sodium | 1310 | 3.8 | Corrode SiC |
| Sulphur dioxide | 1310 | 3.8 | Corrode SiC |
| Oxygen | 1310 | 3.8 | SiC Oxidized |
| Water-vapour | 1090-1370 | 3.1-3.6 | The action on SiC produces hydrate of silicon |
| Hydrocardon | 1370 | 3.1 | Aabsorb carbon power resulted in Hot pollution |