ISC Silicon Pnp Power Transistor 2SB688
Product DescriptionDESCRIPTION Collector-Emitter Breakdown Voltage V(BR)CEO= -120V(Min) Good Linearity of hFE Complement to Type 2SD718 APPLICATIONS...
ISC Silicon Npn Power Transistor 2SC4106
Product DescriptionDESCRIPTION High Collector-Emitter Breakdown Voltage V(BR)CEO= 400V(Min. ) High Switching Speed Wide Area of Safe Operation...
ISC Silicon Npn Power Transistor 2SD2499
Product DescriptionDESCRIPTION High Breakdown Voltage VCBO= 1500V (Min) High Switching Speed Low Saturation Voltage Built-in Damper Diode...
(1)Long life with excellent quality
(2)fast delivery time
(3)perfect after-sales service and stable supply
manufacturer under the strict procedure, and good things are not...
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